METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

A first silicon carbide substrate (11) having a first back surface (B1) and a second silicon carbide substrate (12) having a second back surface (B2) are prepared. The first and second silicon carbide substrates (11, 12) are arranged so that the first and second back surfaces (B1, B2) are exposed in one direction. A bonding part (50) for connecting the first and second back surfaces (B1, B2) with each other is formed. The process for forming the bonding part (50) includes a step wherein a growth layer (30), which is formed from silicon carbide, is formed on the first and second back surfaces (B1, B2) by a sublimation method in which a sublimation product is supplied from the direction.