发明名称 |
NON-VOLATILE MEMORY WITH BI-DIRECTIONAL ERROR CORRECTION PROTECTION |
摘要 |
Embodiments of the present disclosure provide methods and apparatuses related to NVM devices with bi-directional error correction protection. In some embodiments, multiple multi-level parity cells are used to represent parity values stored in codewords of an NVM device. Other embodiments may be described and claimed.
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申请公布号 |
US2010293434(A1) |
申请公布日期 |
2010.11.18 |
申请号 |
US20090467965 |
申请日期 |
2009.05.18 |
申请人 |
BUEB CHRISTOPHER;HALABI SHAUL |
发明人 |
BUEB CHRISTOPHER;HALABI SHAUL |
分类号 |
H03M13/00;G06F12/00;G06F12/02 |
主分类号 |
H03M13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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