发明名称 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
摘要 <p>A first silicon carbide substrate (11) having a first back surface (B1) and a second silicon carbide substrate (12) having a second back surface (B2) are prepared. The first and second silicon carbide substrates (11, 12) are arranged so that the first and second back surfaces (B1, B2) are exposed in one direction. A bonding part (50) for connecting the first and second back surfaces (B1, B2) with each other is formed. The process for forming the bonding part (50) includes a step wherein a growth layer (30), which is formed from silicon carbide, is formed on the first and second back surfaces (B1, B2) by a sublimation method in which a sublimation product is supplied from the direction.</p>
申请公布号 WO2010131569(A1) 申请公布日期 2010.11.18
申请号 WO2010JP57441 申请日期 2010.04.27
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;SASAKI, MAKOTO;HARADA, SHIN;NISHIGUCHI, TARO;FUJIWARA, SHINSUKE;NAMIKAWA, YASUO 发明人 SASAKI, MAKOTO;HARADA, SHIN;NISHIGUCHI, TARO;FUJIWARA, SHINSUKE;NAMIKAWA, YASUO
分类号 H01L21/02;C30B29/36;H01L21/20 主分类号 H01L21/02
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