发明名称 POLARIZATION PLANE DETECTION SENSOR, SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF CONTROLLING THE POLARIZATION PLANE DETECTION SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a polarization detection sensor that produces no offset and unbalance by s-wave and p-wave components of incident light. <P>SOLUTION: The polarization plane detection sensor includes a plurality of unit pixels provided with two photodiodes formed in a silicon substrate 301, a floating diffusion Cfd and a polarization layer formed above the silicon substrate 301, respectively. The polarization layer includes a first polarizer Ps1 that is formed above an area wherein one of the two photodiodes is formed and a first polarization component of incident light passes through, and a second polarizer that is formed above an area wherein the other of the two photodiodes is formed and a second polarization component crossing orthogonally the first polarization component passes through. Each of the unit pixels includes also includes a light shielding section 310 that shields a slanting ray of light entering the floating diffusion Cfd from the first polarizer Ps1 and the second polarizer. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010263021(A) 申请公布日期 2010.11.18
申请号 JP20090111482 申请日期 2009.04.30
申请人 PANASONIC CORP 发明人 SING VIRAHAMPAL;HIROSE YUTAKA
分类号 H01L27/14;G01J1/02;G01J1/42;G01J4/04;G01N21/35;G01N21/3586;H01L27/144;H01L27/146;H04N5/33;H04N5/335;H04N5/341;H04N5/357;H04N5/369 主分类号 H01L27/14
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