发明名称 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS
摘要 <p>The present invention can provide an Mg-containing ZnO mixed single crystal wherein the mixed single crystal comprises an Mg-containing ZnO semiconductor having a bandgap (Eg) of 3.30 < Eg ‰¤ 3.54 eV, and has a film thickness of 5 µm or less. The present invention can provide a method for producing an Mg-containing ZnO mixed single crystal by liquid phase epitaxial growth, wherein the method comprises: mixing and melting ZnO and MgO as solutes and PbO and Bi 2 O 3 (or PbF 2 and PbO) as solvents; and putting a substrate into direct contact with the obtained melt solution, thereby growing the Mg-containing ZnO mixed single crystal on the substrate.</p>
申请公布号 EP2135978(A4) 申请公布日期 2010.11.17
申请号 EP20080722549 申请日期 2008.03.14
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC.;NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 SEKIWA, HIDEYUKI;KOBAYASHI, JUN;OHASHI, NAOKI;SAKAGUCHI, ISAO
分类号 C30B29/22;C30B19/02;H01L21/368;H01L33/00;H01L33/28 主分类号 C30B29/22
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