摘要 |
<p>The method comprises filling (10) a crucible with solid silicon (52), and melting (12) the solid silicon present in the crucible with a temporal overlap, and feeding (14) liquid silicon to the silicon present in the crucible, where the liquid silicon is fed from a supply container and the supply container is a supply crucible (56), in which the solid silicon is melted. The temporal overlap is selected such that the silicon present in the supply crucible is completely liquefied at a time point of a complete liquefaction of the silicon present in the crucible. The method comprises filling (10) a crucible with solid silicon (52), and melting (12) the solid silicon present in the crucible with a temporal overlap, and feeding (14) liquid silicon to the silicon present in the crucible, where the liquid silicon is fed from a supply container and the supply container is a supply crucible (56), in which the solid silicon is melted. The temporal overlap is selected such that the silicon present in the supply crucible is completely liquefied at a time point of a complete liquefaction of the silicon present in the crucible. The crucible is one of four crucibles. The liquid silicon is simultaneously fed to the two crucibles from the same supply container. The silicon disposed in the crucible is partly crystallized. The crystallization of the silicon takes place after the feeding of the liquid silicon. An independent claim is included for a device for providing liquid silicon.</p> |