| 摘要 |
The invention relates to a multi-beam deflector array means (203) for use in a particle-beam exposure apparatus employing a beam of charged particles, said multi-beam deflector array means having an overall plate-like shape with a membrane region and a buried CMOS-layer, said membrane region comprising a first side (FS) facing towards the incoming beam of particles and a second side (SS) opposite to the first side, an array of apertures, each aperture (230) allowing passage of a corresponding beam element formed out of said beam of particles, and an array of electrodes (222,223), each aperture (230) being associated with at least one of said electrodes and the electrodes being controlled via said CMOS layer, wherein the electrodes are pillared, standing proud of the main body of the multi-beam deflector array means, the electrodes being connected to one side of the main body of the multi-beam deflector array means by means of bonding connections. |
