发明名称 |
Method for forming metal line and method for manufacturing display substrate by using the same |
摘要 |
In a method for forming a metal line, a first metal layer and a second metal layer are deposited on a substrate. The first metal layer includes aluminum, and the second metal layer includes molybdenum. A photoresist pattern having a line-shape is formed on the second metal layer. The second metal layer is etched with a chlorine-containing etching gas using the photoresist pattern as a mask. The first metal layer is then etched with a mixture of a chlorine-containing gas and nitrogen gas and/or a mixture of a chlorine-containing gas and argon gas as an etching gas. Impurities such as chlorine ions are removed from the base substrate after etching the first metal layer with a fluorine-containing gas, hydrogen gas, or water vapor. A method for manufacturing a display substrate is disclosed using the method for forming a metal line to form source, drain, and gate electrodes and gate lines.
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申请公布号 |
US7833075(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20070862837 |
申请日期 |
2007.09.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH MIN-SEOK;KIM SANG-GAB;CHOI SHIN-IL;CHIN HONG-KEE;JEONG YU-GWANG;CHOI SEUNG-HA |
分类号 |
H01J1/62;H01J9/24;H01J63/04 |
主分类号 |
H01J1/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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