| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI wafer including a low-stress film without causing a problem in a process of lithography, resist application, dry etching or the like when used as an MEMS substrate; and to provide a method of manufacturing the same. SOLUTION: The SOI wafer includes: a silicon substrate; and a low-stress film having stress having an absolute value≤75 MPa and a silicon thin film on the silicon substrate in this order. The method of manufacturing the SOI wafer includes: a step of preparing a handle substrate being a silicon substrate including a low-stress film having stress having an absolute value≤75 MPa; a step of forming a hydrogen ion implantation layer by implanting hydrogen ions from a surface of a donor substrate being a silicon substrate; a step of sticking a surface of the handle substrate with the low-stress film formed thereon to a surface of the donor substrate with the hydrogen ions implanted therein; and a peeling/transferring step of peeling the hydrogen ion implantation layer by applying mechanical impact to the hydrogen ion implantation layer and transferring the silicon thin film to the stuck handle substrate. COPYRIGHT: (C)2011,JPO&INPIT |
