发明名称 Interconnect for chip level power distribution
摘要 A semiconductor device (601) is provided which comprises a substrate (603); a semiconductor device (605) disposed on said substrate and having a first major surface; a first metal strap (615) which is in electrical contact with said substrate and which is adapted to provide power to a first region (608) of said semiconductor device; and a second metal strap (616) which is in electrical contact with said substrate and which is adapted to provide ground to a second region (609) of said semiconductor device.
申请公布号 US7829997(B2) 申请公布日期 2010.11.09
申请号 US20070732594 申请日期 2007.04.04
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 HESS KEVIN J.;LEE CHU-CHUNG;MILLER JAMES W.
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
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