发明名称 |
Alloy-type semiconductor nanocrystals |
摘要 |
Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.
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申请公布号 |
US7829189(B2) |
申请公布日期 |
2010.11.09 |
申请号 |
US20070819224 |
申请日期 |
2007.06.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG EUN-JOO;AHN TAE-KYUNG |
分类号 |
B32B5/16;H05B33/14;B82Y20/00;C01B17/20;C01B19/00;C09K11/00;C09K11/08;C09K11/56;C09K11/88;C09K11/89;H01L21/20;H01L21/208;H01L21/368;H01L29/06;H01L31/0256;H01L51/00;H01L51/42;H01L51/50;H05B33/00 |
主分类号 |
B32B5/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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