发明名称 Alloy-type semiconductor nanocrystals
摘要 Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.
申请公布号 US7829189(B2) 申请公布日期 2010.11.09
申请号 US20070819224 申请日期 2007.06.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG EUN-JOO;AHN TAE-KYUNG
分类号 B32B5/16;H05B33/14;B82Y20/00;C01B17/20;C01B19/00;C09K11/00;C09K11/08;C09K11/56;C09K11/88;C09K11/89;H01L21/20;H01L21/208;H01L21/368;H01L29/06;H01L31/0256;H01L51/00;H01L51/42;H01L51/50;H05B33/00 主分类号 B32B5/16
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