| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor module having a connection device that reduces the number of wire bonding connections. <P>SOLUTION: The power semiconductor module includes at least one power semiconductor component and a connection device. The connection device is in contact with the power semiconductor component, and is made of a layer bond. This layer bond is composed of at least one first conductive layer which faces the power semiconductor component and forms at least one first conductor path, an insulating layer continuous with the first conductive layer by layer bonding, and a second layer which is also continuous with the insulating layer by layer bonding to face the power semiconductor component and forms at least one second conductor path. The power semiconductor module further includes at least one internal terminal element, which is formed as a contact spring having a first contact section, a second contact section, and a spring portion. In this case, the first contact section has a common contact surface being in contact with the first conductor path or the second conductor path of the connection device. <P>COPYRIGHT: (C)2011,JPO&INPIT |
