| 摘要 |
A gate electrode (26) is provided for controlling a current flowing in a semiconductor layer (SL). A gate insulating film (29) electrically insulates the semiconductor layer (SL) and the gate electrode (26) from each other. A conductor section (24) is arranged on the semiconductor layer (SL) and electrically connected with the semiconductor layer (SL). An interlayer insulating film (25) is arranged on the gate electrode (26) so that the conductor section (24) is electrically insulated from the gate electrode (26). A buffer insulating film (23) covers a partial region on the conductor section (24) and the interlayer insulating film (25), and is composed of an insulator. The electrode layer (21) has a wiring portion (21w) positioned on a region from which the conductor section (24) is exposed, and a pad portion (21p) positioned on the buffer insulating film (23). Thus, damage of an IGBT caused when a wire (22) is connected to the pad portion (21p) is suppressed. Furthermore, larger power can be dealt with, while preventing generation of breakage due to current concentration. |
