发明名称 MEMORY CONTROLLER AND FLASH MEMORY SYSTEM WITH MEMORY CONTROLLER AND CONTROL METHOD FOR FLASH MEMORY
摘要 PROBLEM TO BE SOLVED: To perform a WL control including a PB, in which data low in rewriting frequency are stored, only when the deviation of an erasure count in a plurality of physical blocks (PB) configuring a flash memory becomes large without setting a ware leveling (WL) control system by a user. SOLUTION: The erasure count of the first physical block PB as a PB assigned the first among the PB assigned to a logical block (LB) corresponding to an LBA range instructed from a host system is compared with the erasure count of an empty PB whose erasure count is the minimum among empty PB as the PB in which any significant data are not stored. When the erasure count of the empty PB is larger than the erasure count of the first PB by the prescribed number of times as the result of comparison, the data stored in the first PB are transferred to another PB. In this data transfer, the empty PB whose erasure count is the largest is assigned as the transfer destination PB. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010250534(A) 申请公布日期 2010.11.04
申请号 JP20090098879 申请日期 2009.04.15
申请人 TDK CORP 发明人 MUKODA NAOKI;HANABUSA SHUNICHI
分类号 G06F12/16;G06F12/00 主分类号 G06F12/16
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