| 摘要 |
A semiconductor memory capable of increasing bit density by three-dimensional arrangement of cells and a method for manufacturing the same are provided. In a semiconductor memory 1, gate electrode films 21 are provided on a silicon substrate 11. The gate electrode films 21 are arranged in one direction parallel to the upper surface of the silicon substrate 11 (X direction). Each gate electrode film 21 has a lattice plate-like shape, having through holes 22 in a matrix form as viewed in the X direction. Silicon beams 23 are provided passing through the through holes 22 of the gate electrode films 21 and extending in the X direction. Further, an ONO film 24 including a charge storage layer is provided between the gate electrode film 21 and the silicon beam 23. |
