发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING HIERARCHICALLY-CONSTRUCTED I/O LINES
摘要 To provide main I/O lines(MIOX) arranged along an X direction; a plurality of I/O nodes(ND) arranged along the X direction; an amplifier circuit area(AMPA) including a plurality of amplifier circuits(AMP); a plurality of main I/O lines(MIOY) arranged along a Y direction, which respectively connect each of the main I/O lines(MIOX) and each of the corresponding I/O nodes(ND). Among the main I/O lines(MIOY) allocated to the amplifier circuits different from one another, that having a longer wire length is connected more closely to a center of the corresponding main I/O line(MIOX); and that having a shorter wire length is connected more closely to an end of the corresponding main I/O line(MIOX). Accordingly, the difference in wire length for each signal route becomes smaller, and also the wire length of the longest wire route is reduced.
申请公布号 US2010271856(A1) 申请公布日期 2010.10.28
申请号 US20090489756 申请日期 2009.06.23
申请人 ELPIDAMEMORY INC. 发明人 YAMAZAKI HISASHI
分类号 G11C5/02;G11C5/06;G11C8/00 主分类号 G11C5/02
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