| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor chip which is mounted in three dimensions at low cost by improving transfer technique. <P>SOLUTION: A method of manufacturing the semiconductor chip including a through-electrode 4 penetrating a semiconductor layer 3 and an integrated circuit 7 includes the steps of: preparing a first substrate 1 including a separation layer 2 and the semiconductor layer 3 formed on the separation layer; forming the integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove 4 having a depth that does not reach the separation layer; filling the hole or the groove with an electrical conductor; bonding a second substrate 11 to the semiconductor layer to form a bonded structure; separating the bonded structure at the separation layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the back surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor. <P>COPYRIGHT: (C)2011,JPO&INPIT |
