| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermal treatment jig of a semiconductor silicon substrate for reducing a slip that may be generated when a semiconductor silicon substrate having a diameter of 300 mm or more, particularly 450 mm is subjected to thermal treatment and for suppressing particles on the substrate, and a thermal treatment method using the jig. SOLUTION: This thermal treatment jig is a jig formed with an oxide film converted into cristobalite having a thickness of 10 to 50μm and a surface roughness Ra of 0.5 to 2μm, and is used to support a silicon substrate for thermal treatment to conduct thermal treatment thereto. COPYRIGHT: (C)2011,JPO&INPIT |
