发明名称 METHOD FOR GROWING GALLIUM NITRIDE CRYSTAL AND METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATE
摘要 <p>In a method of growing a gallium nitride crystal, the following steps are performed. First, a base substrate is prepared (step S1). Then, a first gallium nitride layer is grown on the base substrate (step S2). Thereafter, a second gallium nitride layer less brittle than the first gallium nitride layer is grown (step S3).</p>
申请公布号 EP2243867(A1) 申请公布日期 2010.10.27
申请号 EP20080870763 申请日期 2008.12.24
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 TAKEYAMA, TOMOHARU
分类号 C30B25/16;C30B29/38 主分类号 C30B25/16
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