发明名称 |
Method for increasing breaking down voltage of lateral diffused metal oxide semiconductor transistor |
摘要 |
A lateral diffused metal oxide semiconductor transistor is disclosed. A p-type bulk is disposed on a substrate. An n-type well region is disposed in the p-type bulk. A plurality of field oxide layers are disposed on the p-type bulk and the n-type well region. A gate structure is disposed on a portion of the p-type bulk and one of the plurality of field oxide layers. At least one deep trench isolation structure is disposed in the p-type bulk and adjacent to the n-type well region.
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申请公布号 |
US7821082(B1) |
申请公布日期 |
2010.10.26 |
申请号 |
US20090431571 |
申请日期 |
2009.04.28 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
LIN KWANG-MING;PU SHIH-CHIEH;CHEN SHIH-CHAN |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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