SOLID-STATE IMAGE CAPTURING ELEMENT AND DRIVING METHOD FOR THE SAME, METHOD FOR MANUFACTURING SOLID-STATE IMAGE CAPTURING ELEMENT, AND ELECTRONIC INFORMATION DEVICE

摘要

PURPOSE: A solid imaging device, a driving method thereof, a manufacturing method thereof, and an electronic information device are provided to obtain a high quality image by completely transmitting signal charges from a photoelectric conversion and accumulation part to a charge detection part. CONSTITUTION: A photodiode region comprises a first conductive semiconductor region and a second conductive semiconductor region. The first conductive semiconductor region forms a photoelectric conversion and accumulation part(4). The photoelectric conversion and accumulation part is separated from an element isolation region(6) with a p-type well region(5). One end of a gate electrode(10) overlaps one end of the photoelectric conversion and accumulation part. An insulating layer(8) is formed on a substrate between a charge detection part(13) and a surface p+ pinning layer(7).