发明名称 |
METHOD FOR FORMING A HIGH QUALITY INSULATION LAYER ON A SEMICONDUCTOR DEVICE |
摘要 |
A method for forming a high quality insulation layer on a semiconductor device is presented. The method includes a first step of supplying any one of a silicon source gas and an oxygen source gas into a process chamber in which a semiconductor substrate is placed; a second step of simultaneously supplying the silicon source gas and the oxygen source gas into the process chamber having undergone the first step and depositing a silicon oxide layer on the semiconductor substrate; and a third step of supplying any one of the silicon source gas and the oxygen source gas into the process chamber having undergone the second step.
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申请公布号 |
US2010261355(A1) |
申请公布日期 |
2010.10.14 |
申请号 |
US20090493279 |
申请日期 |
2009.06.29 |
申请人 |
AHN SANG TAE;KU JA CHUN;JEON SEUNG JOON |
发明人 |
AHN SANG TAE;KU JA CHUN;JEON SEUNG JOON |
分类号 |
H01L21/314 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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