发明名称 |
METHOD FOR MODIFYING INSULATING FILM WITH PLASMA |
摘要 |
Disclosed is a method for modifying an insulating film with plasma using a plasma processing apparatus which introduces a microwave into a processing chamber through a plane antenna having a plurality of holes. Processing gas containing a noble gas and oxygen is introduced into the processing chamber and microwave is introduced into the processing chamber through the plane antenna. Plasma composed mainly of O2+ ions and O(1D2) radicals is generated in a pressure condition within a range of 6.7 Pa to 267 Pa to modify the insulating film with the plasma. |
申请公布号 |
KR20100109893(A) |
申请公布日期 |
2010.10.11 |
申请号 |
KR20107005863 |
申请日期 |
2009.02.06 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOBAYASHI TAKASHI;KATAYAMA DAISUKE;SATO YOSHIHIRO;HORII JUNJI;HIROTA YOSHIHIRO |
分类号 |
H01L21/3105 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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