| 摘要 |
PROBLEM TO BE SOLVED: To form a conductive hydrogen barrier film with excellent step coverage in a via hole for exposing an upper electrode of a ferroelectric capacitor constituting an FeRAM, and to suppress reduction of a ferroelectric film in burying it with a tungsten film by a CVD method. SOLUTION: The method of manufacturing the semiconductor device includes the steps of: forming, on a substrate, a capacitor including a lower electrode 16B, a capacitive insulating film 16C formed of a ferroelectric and an upper electrode 16D; forming an interlayer dielectric covering the capacitor; forming, on the interlayer dielectric, a connection hole for exposing the upper electrode; forming a first conductive barrier film 18T on the inner surface of the connection hole and the interlayer dielectric using self-ionization plasma sputtering method; forming a second barrier film 18N by being laminated on the first conductive barrier film using a non-self-ionization plasma sputtering method; and burying, by a metal, the connection hole the inner surface of which is delimited by the second conductive barrier film. COPYRIGHT: (C)2011,JPO&INPIT |
