发明名称 INFRARED SOLID-STATE IMAGE SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide an infrared solid-state image sensor with noise reduced wherever possible in reading signals. <P>SOLUTION: The infrared solid-state image sensor includes a sensitive pixel domain with a plurality of infrared detection pixels arranged in a matrix form for detecting incoming infrared rays and a reference pixel domain with a plurality of reference pixels provided therein. The detection pixels each includes a thermoelectric converter. The converter includes an infrared absorbing film for absorbing the infrared rays to convert it into heat and a first thermoelectric conversion element converting the heat converted by the absorbing film into an electric signal. The reference pixels each includes a second thermoelectric conversion element with one end of each reference pixel connected to a common reference potential line, and amplifies/outputs a difference between signal potential read out via a signal line from an infrared detection pixel and reference potential from the reference potential line. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010216833(A) 申请公布日期 2010.09.30
申请号 JP20090060843 申请日期 2009.03.13
申请人 TOSHIBA CORP 发明人 HONDA HIRONAGA;FUNAKI HIDEYUKI
分类号 G01J1/02;G01J5/48;H04N5/33;H04N5/335;H04N5/357;H04N5/374 主分类号 G01J1/02
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