发明名称 |
INFRARED SOLID-STATE IMAGE SENSOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an infrared solid-state image sensor with noise reduced wherever possible in reading signals. <P>SOLUTION: The infrared solid-state image sensor includes a sensitive pixel domain with a plurality of infrared detection pixels arranged in a matrix form for detecting incoming infrared rays and a reference pixel domain with a plurality of reference pixels provided therein. The detection pixels each includes a thermoelectric converter. The converter includes an infrared absorbing film for absorbing the infrared rays to convert it into heat and a first thermoelectric conversion element converting the heat converted by the absorbing film into an electric signal. The reference pixels each includes a second thermoelectric conversion element with one end of each reference pixel connected to a common reference potential line, and amplifies/outputs a difference between signal potential read out via a signal line from an infrared detection pixel and reference potential from the reference potential line. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010216833(A) |
申请公布日期 |
2010.09.30 |
申请号 |
JP20090060843 |
申请日期 |
2009.03.13 |
申请人 |
TOSHIBA CORP |
发明人 |
HONDA HIRONAGA;FUNAKI HIDEYUKI |
分类号 |
G01J1/02;G01J5/48;H04N5/33;H04N5/335;H04N5/357;H04N5/374 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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