发明名称 |
METHOD FOR ROUGHENING SUBSTRATE SURFACE AND METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE |
摘要 |
<p>A method for roughening a substrate surface, which comprises: a step of forming an opening (103) in a protective film (102) which is formed on the surface of a semiconductor substrate (101a); a step of forming a first recess (104) below the opening (103) and in the vicinity thereof by performing a first etching using an acid solution, while using the protective film (102) as a mask; a step of removing an oxide film (104a) which is formed on the surface of the first recess (104) by performing an etching, while using the protective film (102) as a mask; a step of forming a second recess (106) below the opening (103) and in the vicinity thereof by performing an anisotropic etching, while using the protective film (102) as a mask; and a step of removing the protective film (102).</p> |
申请公布号 |
WO2010109692(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
WO2009JP64938 |
申请日期 |
2009.08.27 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION;NISHIMURA, KUNIHIKO;MATSUNO, SHIGERU;NIINOBE, DAISUKE |
发明人 |
NISHIMURA, KUNIHIKO;MATSUNO, SHIGERU;NIINOBE, DAISUKE |
分类号 |
H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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