发明名称 METHOD FOR ROUGHENING SUBSTRATE SURFACE AND METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE
摘要 <p>A method for roughening a substrate surface, which comprises: a step of forming an opening (103) in a protective film (102) which is formed on the surface of a semiconductor substrate (101a); a step of forming a first recess (104) below the opening (103) and in the vicinity thereof by performing a first etching using an acid solution, while using the protective film (102) as a mask; a step of removing an oxide film (104a) which is formed on the surface of the first recess (104) by performing an etching, while using the protective film (102) as a mask; a step of forming a second recess (106) below the opening (103) and in the vicinity thereof by performing an anisotropic etching, while using the protective film (102) as a mask; and a step of removing the protective film (102).</p>
申请公布号 WO2010109692(A1) 申请公布日期 2010.09.30
申请号 WO2009JP64938 申请日期 2009.08.27
申请人 MITSUBISHI ELECTRIC CORPORATION;NISHIMURA, KUNIHIKO;MATSUNO, SHIGERU;NIINOBE, DAISUKE 发明人 NISHIMURA, KUNIHIKO;MATSUNO, SHIGERU;NIINOBE, DAISUKE
分类号 H01L31/04 主分类号 H01L31/04
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