发明名称 Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
摘要 A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.
申请公布号 US7802538(B2) 申请公布日期 2010.09.28
申请号 US20060608333 申请日期 2006.12.08
申请人 发明人 PADHI DEENESH;PARK SOHYUN;BALASUBRAMANIAN GANESH;ROCHA-ALVAREZ JUAN CARLOS;XIA LI-QUN;WITTY DEREK R.;M'SAAD HICHEM
分类号 C23C16/00;C23C16/30;C23C16/455;C23C16/52 主分类号 C23C16/00
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