发明名称 |
Lithographic patterning for sub-90nm with a multi-layered carbon-based hardmask |
摘要 |
Multi-layered carbon-based hardmask and method to form the same. The multi-layered carbon-based hardmask includes at least top and bottom carbon-based hardmask layers having different refractive indexes. The top and bottom carbon-based hardmask layer thicknesses and refractive indexes are tuned so that the top carbon-based hardmask layer serves as an anti-reflective coating (ARC) layer.
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申请公布号 |
US7803715(B1) |
申请公布日期 |
2010.09.28 |
申请号 |
US20080345568 |
申请日期 |
2008.12.29 |
申请人 |
HAIMSON SHAI;SCHWARTZ GABE;SHIFRIN MICHAEL |
发明人 |
HAIMSON SHAI;SCHWARTZ GABE;SHIFRIN MICHAEL |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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