发明名称 |
MOULD FOR GALVANOPLASTY AND METHOD OF FABRICATING THE SAME |
摘要 |
PURPOSE: A mold for an electric fabrication and a method for manufacturing thereof are provided to perform electrolysis evaporation on a concave part after at least one cavity is charged. CONSTITUTION: A mold for an electric fabrication includes next steps. An electrical conductibility layer is evaporated on a top part(20) and a lower part(22) of a wafer(21) consisting of a silicon based material. The wafer is fixed on a substrate(23) using a bonding layer. One part of the conductive layer is eliminated on the top part of the wafer. The wafer is etched to the conductivity and one or more cavity is formed within the mold. A part(27) is formed for forming a second level on the conductive layer on the top of wafer.
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申请公布号 |
KR20100103433(A) |
申请公布日期 |
2010.09.27 |
申请号 |
KR20100022723 |
申请日期 |
2010.03.15 |
申请人 |
NIVAROX-FAR S.A. |
发明人 |
CUSIN PIERRE;GOLFIER CLARE;THIEBAUD JEAN PHILIPPE |
分类号 |
C25D1/10;C23F1/02 |
主分类号 |
C25D1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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