| 摘要 |
<p>Disclosed is a process for producing a semiconductor device, which comprises the steps of: forming a diffusion-preventing mask (2, 21) on the surface of a semiconductor substrate (1); applying a dopant-diffusing agent (3, 4) comprising a first or second electrically conductive dopant on a part of the surface of the semiconductor substrate (1) which is positioned apart from the diffusion-preventing mask (2, 21) by a predetermined distance; and diffusing the dopant from the dopant-diffusing agent (3, 4) in the semiconductor substrate (1) to form a dopant-diffusing layer (5, 6, 16, 17).</p> |
