| 摘要 |
Provided is a semiconductor device including an N-channel high-voltage MOS transistor, in which wiring metal connected to a drain region is laid above a boundary portion between an oxide film formed by LOCOS process or the like on a low impurity concentration region and a high impurity concentration region forming the drain region, to thereby alleviate an electric field concentration at the boundary portion which is a contact portion between the low impurity concentration region and the high impurity concentration region by an electric field generated from the wiring metal toward a semiconductor substrate.
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