| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-receiving element having high detection efficiency and dark counting rate in detecting a weak light, and to provide a method of manufacturing the semiconductor light-receiving element. <P>SOLUTION: The semiconductor light-receiving element 10 is provided with a first conductivity-type multiplication region 13, and a second conductivity-type multiplication region 12. The multiplication region 12 is formed so as to contact the multiplication region 13. The multiplication region 13 has an impurity concentration range of 1×10<SP>14</SP>cm<SP>-3</SP>to 5×10<SP>15</SP>cm<SP>-3</SP>. The multiplication region 12 has an impurity concentration higher than the impurity concentration of the multiplication region 13, and a thickness of 0.2 μm-0.3 μm. The multiplication region 12, preferably, has an impurity concentration of 5×10<SP>15</SP>cm<SP>-3</SP>to 8×10<SP>17</SP>cm<SP>-3</SP>. <P>COPYRIGHT: (C)2007,JPO&INPIT |
