| 摘要 |
One or more embodiments of the present invention relates to a method for passivating metallic interconnects, said method including: forming a metallic conductor embedded in at least one surrounding dielectric layer, said metallic conductor including a metal or alloy chosen from a group consisting of Cu, Ag, and alloys including one or more of these metals, said metallic conductor and said at least one surrounding dielectric layer having top surfaces; and forming a capping passivation film directly on the top surface of the metallic conductor, but not over the top surface of the at least one surrounding dielectric layer, wherein said capping passivation film including one or more materials selected from the group consisting of copper sulfide, silver sulfide, copper selenide, silver selenide, copper telluride, and silver telluride, wherein the copper sulfide refers to CuSX or Cu2SX, the silver sulfide refers to AgSX or Ag2SX, the copper selenide refers to CuSeXor Cu2SeX, and the copper telluride refers to CuTeX or Cu2TeX, and wherein 0.7≦̸X≦̸1.3.
|
