| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a laminated wafer which achieves a strong coupling between wafers made of different materials having a large difference in thermal expansion coefficient, without lowering the maximum heat treatment temperature and in which cracks or chips of the wafer do not occur. SOLUTION: The method for manufacturing a laminated wafer 7, by forming a silicon thin-film layer on a surface 4 of an insulating substrate 3, includes steps in the order of: applying a surface activation treatment to both or any one of a surface 2 of the silicon wafer 1 or a silicon wafer 1, to which an oxide film is layered and a surface 4 of the insulating substrate followed by laminating in an atmosphere of temperature exceeding 50°C and lower than 300°C; applying a heat treatment to a laminated wafer 5 obtained by the lamination at a temperature of 200-350°C; and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon thin-film layer. COPYRIGHT: (C)2010,JPO&INPIT
|
