| 摘要 |
<p>A semiconductor light emitting device (100) is provided. The semiconductor light emitting device (100) comprises a plurality of compound semiconductor layers (135), an electrode layer (150), a conductive support member (170) and a first buffer member (160). The compound semiconductor layers (135) comprise a first conductive semiconductor layer (110), an active layer (120) and a second conductive semiconductor layer (130). The electrode layer (150) is disposed under the plurality of compound semiconductor layers (135). The conductive support member (170) is disposed under the electrode layer (150). The first buffer member (160) is embedded to be spaced apart, in the conductive support member (170).</p> |
