| 摘要 |
There is provided a semiconductor storage device having a memory cell including a transfer transistor, a load transistor and a drive transistor, which includes a first transfer transistor to become conductive by a potential applied to a first word line placed in parallel with a pair of bit lines, a second transfer transistor to become conductive by a potential applied to a second word line placed orthogonal to the pair of bit lines, and a control circuit to output a control signal for controlling the potentials of the first word line and the second word line in such a way that the first transfer transistor becomes conductive earlier than the second transfer transistor when setting both of the first transfer transistor and the second transfer transistor to a conductive state.
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