发明名称 SEMICONDUCTOR INSPECTION METHOD, AND DEVICE TAKING EFFECTS OF ELECTRON BEAM INTO CONSIDERATION
摘要 PROBLEM TO BE SOLVED: To provide a device capable of probing under reduced effects of an electron beam. SOLUTION: The rough approaching of a probing is carried out utilizing a magnification lower than a magnification for usual view. Once a target contact of a semiconductor is detected, a probe is normally moved with a measurement position in the center of a screen without moving a stage. The contact can not be confirmed with a low magnification because of microfabrication, and the probe can be confirmed with a low magnification and needs to be displayed in real time. A single still image of high magnification and an image of low magnification acquired in real time are put together and displayed because of characteristics of the target contact and probe necessary for probing to actualize the probing with a low magnification, and thereby effects of an electronic beam are reduced to obtain correct electric characteristics. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010182897(A) 申请公布日期 2010.08.19
申请号 JP20090025496 申请日期 2009.02.06
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 ANDO TORU;SASAJIMA MASAHIRO
分类号 H01L21/66;H01J37/22 主分类号 H01L21/66
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