| 摘要 |
PURPOSE: It controls the plasma power and it multiplies the first, and the density within the second and the third PETEOS(Plasma Enhanced Tetraethylosilicate) film or the manufacturing method of the semiconductor device reduces density. CONSTITUTION: The first insulating layer(108) is formed on the top of the semiconductor substrate(100). The second insulating layer(110) having the fast wet etch rate than the first insulating layer is formed. The backing membrane(112) consisting of the nitride film is formed on the second insulating layer. The third dielectric polish layer(114) having the wet etch rate which is similar on the backing membrane of the first insulating layer is formed.
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