发明名称 |
FIN AND FINFET FORMATION BY ANGLED ION IMPLANTATION |
摘要 |
A semiconductor device is formed by providing a substrate and forming a semiconductor-containing layer atop the substrate. A mask having a plurality of openings is then formed atop the semiconductor-containing layer, wherein adjacent openings of the plurality of openings of the mask are separated by a minimum feature dimension. Thereafter, an angled ion implantation is performed to introduce dopants to a first portion of the semiconductor-containing layer, wherein a remaining portion that is substantially free of dopants is present beneath the mask. The first portion of the semiconductor-containing layer containing the dopants is removed selective to the remaining portion of semiconductor-containing layer that is substantially free of the dopants to provide a pattern of sublithographic dimension, and the pattern is transferred into the substrate to provide a fin structure of sublithographic dimension. |
申请公布号 |
US2010203732(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20090368561 |
申请日期 |
2009.02.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;CHENG KANGGUO;WANG GENG |
分类号 |
H01L21/302;H01L21/30;H01L21/308 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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