| 摘要 |
A nonvolatile semiconductor memory device includes: a semiconductor substrate; a multilayer structure; a semiconductor pillar; a third insulating film; and a fourth insulating film layer. The a multilayer structure is provided on the semiconductor substrate and including a plurality of constituent multilayer bodies stacked in a first direction perpendicular to a major surface of the semiconductor substrate. Each of the plurality of constituent multilayer bodies includes an electrode film provided parallel to the major surface, a first insulating film, a charge storage layer provided between the electrode film and the first insulating film, and a second insulating film provided between the charge storage layer and the electrode film. The semiconductor pillar penetrates through the multilayer structure in the first direction. The third insulating film is provided between the semiconductor pillar and the electrode film. The fourth insulating film is provided between the semiconductor pillar and the charge storage layer.
|
