GAN SINGLE-CRYSTAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR EPITAXIAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR DEVICE, AND METHODS OF MAKING THE SAME

摘要

PURPOSE: A gallium nitride mono-crystalline substrate, a nitride-based semiconductor epitaxial substrate, a nitride-based semiconductor device, and a method for manufacturing the same are provided to reduce the surface roughness of a gallium nitride mono-crystalline. CONSTITUTION: A nitride-based semiconductor epitaxial substrate(10) includes gallium nitride mono-crystalline substrate(11) and a nitride-based compound semiconductor layer(12). An electrode for supplying a current is attached to the nitride-based semiconductor epitaxial substrate. The nitride-based semiconductor epitaxial substrate is epitaxial-grown by a molecular-beam-epitaxy method.