摘要 |
A semiconductor integrated circuit device according to an embodiment of the present invention includes a functional circuit region including a functional circuit, a dummy region formed in a region other than the functional circuit region, and plural dummy MOSFETs formed in a dummy region and having a dummy gate electrode on a dummy diffusion layer, the plural dummy MOSFETs being arranged such that date rates of the dummy diffusion layer and dummy gate electrode are kept constant in a predetermined section.
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