发明名称 |
Semiconductor device including single crystal silicon layer |
摘要 |
A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of <100>. The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.
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申请公布号 |
US7772711(B2) |
申请公布日期 |
2010.08.10 |
申请号 |
US20060430117 |
申请日期 |
2006.05.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NOGUCHI TAKASHI;CHO HANS S.;XIANYU WENXU;KIM DO-YOUNG;KWON JANG-YEONG;YIN HUAXIANG;PARK KYUNG-BAE;ZHANG XIAOXIN |
分类号 |
H01L27/11 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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