SEMICONDUCTOR DEVICE

摘要

A semiconductor device is fabricated on an off-cut semiconductor substrate 11. Each unit cell 10 thereof includes: a first semiconductor layer 12 on the surface of the substrate 11; a second semiconductor layer 16 stacked on the first semiconductor layer 12 to have an opening 16e that exposes first and second conductive regions 15 and 14 at least partially; a first conductor 19 located inside the opening 16e of the second semiconductor layer 16 and having a conductive surface 19s that contacts with the first and second conductive regions 15 and 14; and a second conductor 17 arranged on the second semiconductor layer 16 and having an opening 18e corresponding to the opening 16s of the second semiconductor layer 16. In a plane that is defined parallel to the surface of the substrate 11, the absolute value of a difference between the respective lengths of the second semiconductor layer 16 and the second conductor 18 as measured in the off-cut direction is greater than the absolute value of their difference as measured perpendicularly to the off-cut direction.