发明名称 |
Method for semiconductor compositional grading to realize low-resistance, distributed Bragg reflectors |
摘要 |
A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is achieved by sequential exposure of a substrate to predetermined combinations of the elemental sources to produce a pair of DBR layers of compound alloys and a graded region including one or more discrete additional layers between the DBR layers of intermediate alloy composition. Exposure durations and combinations of the elemental sources in each exposure are predetermined by DBR design characteristics.
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申请公布号 |
US7767480(B1) |
申请公布日期 |
2010.08.03 |
申请号 |
US20050063230 |
申请日期 |
2005.02.22 |
申请人 |
OPTICOMP CORPORATION |
发明人 |
PICKRELL GREGORY;LOUDERBACK DUANE A.;GUILFOYLE PETER |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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