| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique with which the number of photomasks can be reduced, manufacturing cost can be reduced, and improvement in productivity and reliability can be achieved in a manufacturing step of a semiconductor device formed using a thin film transistor. <P>SOLUTION: A film forming a channel protection layer is formed on an oxide semiconductor layer having a light-transmitting property, a positive photoresist is formed on the film forming the channel protection layer, and a channel protection layer is selectively formed on a channel formation region in the oxide semiconductor layer by using a back surface light exposure method. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
