| 摘要 |
<p>PURPOSE: A method for manufacturing a solid imaging device of a rear illumination type is provided to manufacture the solid imaging device with high quality by preventing foreign materials from affecting in stripping a silicon substrate. CONSTITUTION: A silicon epitaxial growth layer is formed on a silicon substrate(1). A photoelectric conversion unit, a transmission gate, a peripheral circuit unit, and a wiring layer are formed on a silicon epitaxial growth layer(2). A spilt layer is formed on the silicon substrate of the silicon epitaxial growth layer(3). A support substrate is formed on the wiring layer(4). The silicon substrate is stripped from the split layer so that the silicon layer comprised of the part of the silicon substrate remains on the support substrate.</p> |
