| 摘要 |
A magnetic detector includes a magnetoresistive element and an impact sensor. The magnetoresistive element has a plurality of element-constituent layers that are stacked and include a free layer having a magnetization direction that changes in response to a magnetic field to be detected by the magnetic detector. The impact sensor has a plurality of sensor-constituent layers that are made of materials the same as those of the element-constituent layers and stacked in the same order as the element-constituent layers. The plurality of sensor-constituent layers include an impact detecting layer corresponding to the free layer and having a magnetization direction that changes by an inverse magnetostrictive effect in response to distortion created in the impact detecting layer by an impact received by the magnetic detector. The impact detecting layer exhibits a greater amount of change in magnetization direction when the magnetic detector receives an impact, compared with the free layer.
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