THROUGH-SILICON VIA WITH LOW-K DIELECTRIC LINER

摘要

PURPOSE: A penetration silicon via with a dielectric liner of a low dielectric constant is provided to reduce capacitance and a dielectric constant by using low-K or ELK(Extra Low-K) dielectric materials with the low dielectric constant. CONSTITUTION: An electric circuit(112) is formed on a semiconductor substrate(110). A semiconductor substrate includes a circuit side and a back side opposite to the circuit side. A through-silicon via(124) passes through the semiconductor substrate and is extended. A first dielectric layer(116) is positioned between the through-silicon via and the semiconductor substrate. The dielectric constant of the first dielectric layer is below 3.5.