| 摘要 |
A resistance change memory includes a memory cell which is connected to a first node, and programmed from a first resistance state to a second resistance state, a first replica cell which is connected to a second node, generates a write voltage for programming from the first resistance state to the second resistance state, and is fixed in the first resistance state, and a first constant-current source connected to the second node, wherein when writing the second resistance state in the memory cell, a voltage of the first node is held equal to that of the second node.
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